专为6G模块而生的TCXO晶体振荡器X1G005231003400,新兴产品改变着我们的生活,带来便携的同时也深刻影响着我们的生活方式,从最初的2G到如今的6G,一路上所遇到的困难众多,研究人员能够坚持不懈研发新兴产品,足以说他们对工作的热爱,以及对于美好生活的向往,站在顶尖风口的6G,同样有太多美好值得我们去憧憬,随之而来也催生了各种新的手机应用,新兴产品几乎离不开晶振,振荡器产品的辅助,作为体积微小的晶振产品,却能够发挥巨大的作用,具有高可靠和稳定性能之特点。
专为6G模块而生的TCXO晶体振荡器X1G005231003400,同时在这个万变的物联网与互联网时代,不断促使我们进步,也同样促使互联网产业从PC端向移动端迁移,爱普生公司通过自身敏锐的观察力察觉到新的机会,推出了高品质的有源晶振,而6G更高的速率带来了更好的用户体验,并让短视频等数据应用得到了爆发,而5G从它一开始的设计初衷就是为了支持各种垂直行业的应用,更加灵活和可靠地提高各种极致服务,并实现万物互联。
Product Number | Model |
进口晶振 |
LxWxH | Output Wave | Supply Voltage | F.Tol@25°C | Ope Temperature |
X1G005231002600 | TG5032CGN | 40.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231002700 | TG5032CGN | 40.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231002800 | TG5032CGN | 20.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231002900 | TG5032CGN | 40.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231003000 | TG5032CGN | 38.880000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231003100 | TG5032CGN | 38.880000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231003200 | TG5032CGN | 19.200000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 2.700 to 3.000 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231003300 | TG5032CGN | 19.200000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231003400 | TG5032CGN | 20.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231003500 | TG5032CGN | 25.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231003600 | TG5032CGN | 19.440000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231003700 | TG5032CGN | 30.720000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231003900 | TG5032CGN | 24.576000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231004100 | TG5032CGN | 40.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231004200 | TG5032CGN | 10.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231004300 | TG5032CGN | 10.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231004400 | TG5032CGN | 40.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231004600 | TG5032CGN | 10.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231004700 | TG5032CGN | 24.576000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231004800 | TG5032CGN | 40.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 2.375 to 2.625 V | +/-1.0 ppm | -40 to ++85 °C |