亚陶晶振KX201系列CMOS晶体振荡器,KX2011AS032.768000,时钟晶振
由于许多低功耗和便携式应用程序大部分时间都处于待机模式，因此这些系统必须最大限度地降低待机功耗。我们基于32.768kHz的定时源允许这些系统快速转换到待机模式（<10ms），以最大限度地延长电池寿命，而不会牺牲维持准确时钟和日历所需的稳定性（± 20ppm）。
亚陶晶振KX201系列CMOS晶体振荡器,KX2011AS032.768000,时钟晶振
FNETHE025
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
25MHz
±25ppm
FNETHE025
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
25MHz
±25ppm
FNETHE025
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
25MHz
±25ppm
FNSURV027
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
27MHz
±30ppm
FNSURV027
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
27MHz
±30ppm
FNSURV027
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
27MHz
±30ppm
FNGEPO002
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
2.048MHz
±50ppm
FNGEPO002
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
2.048MHz
±50ppm
FNGEPO002
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
2.048MHz
±50ppm
FKSSD1025
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
25MHz
±25ppm
FKSSD1025
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
25MHz
±25ppm
FKSSD1025
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
25MHz
±25ppm
UJWIFI026
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
26MHz
±20ppm
UJWIFI026
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
26MHz
±20ppm
UJWIFI026
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
26MHz
±20ppm
FNEPON125
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
125MHz
±50ppm
FNEPON125
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
125MHz
±50ppm
FNEPON125
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
125MHz
±50ppm
FK1330001Z
Diodes Incorporated
SaRonix-eCera™ FK
13.3333MHz
±25ppm
FK1330001Z
Diodes Incorporated
SaRonix-eCera™ FK
13.3333MHz
±25ppm
FK1330001Z
Diodes Incorporated
SaRonix-eCera™ FK
13.3333MHz
±25ppm
FJ2400011
Diodes Incorporated
SaRonix-eCera™ FJ
24MHz
±50ppm
FJ2400011
Diodes Incorporated
SaRonix-eCera™ FJ
24MHz
±50ppm
FJ2400011
Diodes Incorporated
SaRonix-eCera™ FJ
24MHz
±50ppm
亚陶晶振KX201系列CMOS晶体振荡器,KX2011AS032.768000,时钟晶振
亚陶晶振KX201系列实时时钟振荡器在广泛的工作条件下实现了卓越的稳定性。1.8V/2.5V/3.3V, 小体积晶振尺寸2.0x1.6mm, 频率32.768kHz，CMOS晶体振荡器，它利用Pericom专有技术实现低于30μA的超低电流。输出时钟信号与LVCMOS/LVTTL逻辑电平兼容。该器件采用卷带包装，采用2.0x1.6mm表面贴装陶瓷封装
特征：
AT Cut 32.768 kHz XO时钟晶振
CMOS兼容逻辑电平
超低有功电流（< 30μA）
非常严格的温度稳定性
专为标准回流和清洗技术而设计
无铅且符合 RoHS/Green 标准
应用：需要低电流和高度稳定性的实时时钟振荡器
FJ2400002
Diodes Incorporated
SaRonix-eCera™ FJ
24MHz
±50ppm
FJ2400002
Diodes Incorporated
SaRonix-eCera™ FJ
24MHz
±50ppm
FJ2400002
Diodes Incorporated
SaRonix-eCera™ FJ
24MHz
±50ppm
FN2500149
Diodes Incorporated
SaRonix-eCera™ FN
25MHz
±50ppm
FN2500149
Diodes Incorporated
SaRonix-eCera™ FN
25MHz
±50ppm
FN2500149
Diodes Incorporated
SaRonix-eCera™ FN
25MHz
±50ppm
SXGPON155
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
155.52MHz
±50ppm
SXGPON155
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
155.52MHz
±50ppm
SXGPON155
Diodes Incorporated
SaRonix-eCera™ ASSP XO™
155.52MHz
±50ppm
HX2513F0026.000000
Diodes Incorporated
SaRonix-eCera™ HX
26MHz
±50ppm
HX2513F0026.000000
Diodes Incorporated
SaRonix-eCera™ HX
26MHz
±50ppm
HX2513F0026.000000
Diodes Incorporated
SaRonix-eCera™ HX
26MHz
±50ppm
HX3125006Q
Diodes Incorporated
SaRonix-eCera™ HX
25MHz
±30ppm
HX3125006Q
Diodes Incorporated
SaRonix-eCera™ HX
25MHz
±30ppm
HX3125006Q
Diodes Incorporated
SaRonix-eCera™ HX
25MHz
±30ppm
NX3211C0125.000000
Diodes Incorporated
SaRonix-eCera™ NX
125MHz
±50ppm
NX3211C0125.000000
Diodes Incorporated
SaRonix-eCera™ NX
125MHz
±50ppm
NX3211C0125.000000
Diodes Incorporated
SaRonix-eCera™ NX
125MHz
±50ppm
FJ1600002
Diodes Incorporated
SaRonix-eCera™ FJ
16MHz
±50ppm
FJ1600002
Diodes Incorporated
SaRonix-eCera™ FJ
16MHz
±50ppm
FJ1600002
Diodes Incorporated
SaRonix-eCera™ FJ
16MHz
±50ppm
JX7011D0070.656000
Diodes Incorporated
SaRonix-eCera™ JX
70.656MHz
±25ppm
JX7011D0070.656000
Diodes Incorporated
SaRonix-eCera™ JX
70.656MHz
±25ppm
JX7011D0070.656000
Diodes Incorporated
SaRonix-eCera™ JX
70.656MHz
±25ppm
UJ2600007Z
Diodes Incorporated
SaRonix-eCera™ UJ
26MHz
±20ppm
亚陶晶振KX201系列CMOS晶体振荡器,KX2011AS032.768000,时钟晶振
| 输出逻辑 | CMOS |
|---|---|
| 电源电压 (V) | 1.8,2.5,3.3 |
| 包装尺寸（毫米） | 2.0x1.6x0.75 |
| 包装类型 | 陶瓷缝 |
| 稳定性 (PPM) | 20到50 |
| 产品系列 | KX201 |
| 频率范围 (MHz) | 32.768KHZ |
| 抖动均方根 (ps) | <1 PS |
| 垫 | 4 |
| 家庭 | 千赫XO |
| UJ2600007Z | Diodes Incorporated | SaRonix-eCera™ UJ | 26MHz | ±20ppm |
| UJ2600007Z | Diodes Incorporated | SaRonix-eCera™ UJ | 26MHz | ±20ppm |
| FJ1120001Z | Diodes Incorporated | SaRonix-eCera™ FJ | 11.2896MHz | ±25ppm |
| FJ1120001Z | Diodes Incorporated | SaRonix-eCera™ FJ | 11.2896MHz | ±25ppm |
| FJ1120001Z | Diodes Incorporated | SaRonix-eCera™ FJ | 11.2896MHz | ±25ppm |
| FDC500026 | Diodes Incorporated | SaRonix-eCera™ FD | 125MHz | ±50ppm |
| FDC500026 | Diodes Incorporated | SaRonix-eCera™ FD | 125MHz | ±50ppm |
| FDC500026 | Diodes Incorporated | SaRonix-eCera™ FD | 125MHz | ±50ppm |
| HX7011C0025.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 25MHz | ±25ppm |
| HX7011C0025.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 25MHz | ±25ppm |
| HX7011C0025.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 25MHz | ±25ppm |
| NX5011B0125.000000 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm |
| NX5011B0125.000000 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm |
| NX5011B0125.000000 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm |
| FNA000088Z | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±50ppm |
| FNA000088Z | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±50ppm |
| FNA000088Z | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±50ppm |
| FNA000065 | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±25ppm |
| FNA000065 | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±25ppm |
| FNA000065 | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±25ppm |
| NX71C50003 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm |
| NX71C50003 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm |
| NX71C50003 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm |
| FNC500131 | Diodes Incorporated | SaRonix-eCera™ FN | 125MHz | ±50ppm |
| FNC500131 | Diodes Incorporated | SaRonix-eCera™ FN | 125MHz | ±50ppm |
亚陶晶振KX201系列CMOS晶体振荡器,KX2011AS032.768000,时钟晶振
| KX201 | 1.82.53.3 | 2.0 x 1.6 x 0.75 | 陶瓷缝 | 20~50 | KX201 | 32.768KHZ | <1 | 4 | 1.8V/2.5V/3.3V, 2.0x1.6mm, 32.768k CMOS 晶体振荡器 | |
|---|---|---|---|---|---|---|---|---|---|---|
| KX251 | 1.82.53.3 | 2.5 x 2.0 x 0.9 | 陶瓷缝 | 20~50 | KX251 | 32.768KHZ | <1 | 4 | 1.8V/2.5V/3.3V, 2.5x2.0mm, 32.768kHz CMOS 晶体振荡器 | |
| KX31Q | 3.32.51.8 | 3.2 x 2.5 | 陶瓷缝 | 20~50 | KXQ | 32.768KHZ | <1 | 4 | 1.8/2.5/3.3V、3.2x2.5mm、超低电流、32.768KHz、汽车级CMOS晶体振荡器 | |
| KX321 | 1.82.53.3 | 3.2 x 2.5 x 1.0 | 陶瓷缝 | 20~50 | KX321 | 32.768KHZ | <1 | 4 | 1.8V/2.5V/3.3V, 3.2x2.5mm, 32.768kHz CMOS 晶体振荡器 | |
| KX501 | 1.82.53.3 | 5.0 x 3.2 x 1.2 | 陶瓷缝 | 20~50 | KX501 | 32.768KHZ | <1 | 4 | 1.8V/2.5V/3.3V, 5.0x3.2mm, 32.768kHz CMOS 晶体振荡器 |
| FNC500131 | Diodes Incorporated | SaRonix-eCera™ FN | 125MHz | ±50ppm |
| NX71C50001 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±20ppm |
| NX71C50001 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±20ppm |
| NX71C50001 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±20ppm |
| FM3900001Z | Diodes Incorporated | SaRonix-eCera™ FM | 39.0625MHz | ±50ppm |
| FM3900001Z | Diodes Incorporated | SaRonix-eCera™ FM | 39.0625MHz | ±50ppm |
| FM3900001Z | Diodes Incorporated | SaRonix-eCera™ FM | 39.0625MHz | ±50ppm |
| FKA000018Z | Diodes Incorporated | SaRonix-eCera™ FK | 100MHz | ±50ppm |
| FKA000018Z | Diodes Incorporated | SaRonix-eCera™ FK | 100MHz | ±50ppm |
| FKA000018Z | Diodes Incorporated | SaRonix-eCera™ FK | 100MHz | ±50ppm |
| HX3124501Q | Diodes Incorporated | SaRonix-eCera™ HX | 24.545452MHz | ±25ppm |
| HX3124501Q | Diodes Incorporated | SaRonix-eCera™ HX | 24.545452MHz | ±25ppm |
| HX3124501Q | Diodes Incorporated | SaRonix-eCera™ HX | 24.545452MHz | ±25ppm |
| HX31330001 | Diodes Incorporated | SaRonix-eCera™ HX | 33MHz | ±50ppm |
| HX31330001 | Diodes Incorporated | SaRonix-eCera™ HX | 33MHz | ±50ppm |
| HX31330001 | Diodes Incorporated | SaRonix-eCera™ HX | 33MHz | ±50ppm |
| HX3212F0040.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 40MHz | ±50ppm |
| HX3212F0040.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 40MHz | ±50ppm |
| HX3212F0040.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 40MHz | ±50ppm |
| SX10GE156 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 156.25MHz | ±50ppm |
| SX10GE156 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 156.25MHz | ±50ppm |
| SX10GE156 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 156.25MHz | ±50ppm |
| HX3127001Q | Diodes Incorporated | SaRonix-eCera™ HX | 27MHz | ±25ppm |
| HX3127001Q | Diodes Incorporated | SaRonix-eCera™ HX | 27MHz | ±25ppm |
| HX3127001Q | Diodes Incorporated | SaRonix-eCera™ HX | 27MHz | ±25ppm |
亚陶晶振KX201系列CMOS晶体振荡器,KX2011AS032.768000,时钟晶振
我们的频率控制产品 (FCP) 由石英晶体 (XTAL) 谐振器和晶体振荡器 (XO) 组成
以下是此工具中使用的术语的定义：
XO/CXO – 晶体振荡器
SSXO – 扩频晶体振荡器
TCXO – 温度补偿晶体振荡器（目前不可用）
VCTCXO – 压控温度补偿晶体振荡器（目前不可用）
VCXO – 压控晶体振荡器
Xtal – 石英晶体谐振器
kHz Xtal – kHz 晶振
MHz Xtal（玻璃） – Xtal 采用 SMD 封装，带玻璃密封
MHz Xtal（金属罐）——采用 DIP（通孔）封装的 Xtal
MHz Xtal (Seam) – Xtal 采用 SMD 封装，带接缝密封
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